High temperature performance of dielectrically isolated LDMOSFET, LIGBT and LEST

Author

Sunkavalli, R. ; Baliga, B.J. ; Huang, Y.S.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

683

Lastpage

686

Abstract

High temperature performance of dielectrically isolated LDMOSFETs, LIGBTs and dual channel LESTs with a breakdown voltage of 500 V are compared. The device parameters measured between 25/spl deg/C and 200/spl deg/C include the on-state current, threshold voltage, transconductance and the switching characteristics. The high temperature performance of the LIGBT is found to be superior to the LEST in terms of on-state current at a given forward bias, the parasitic thyristor latching current density, and the turnoff times. The effect of anode shorting and hybrid Schottky anode structures, for both the LIGBT and LEST, on the tradeoff curves are reported for different operating temperatures.<>

Keywords

current density; electric breakdown of solids; insulated gate bipolar transistors; insulated gate field effect transistors; power integrated circuits; power transistors; switching; 25 to 200 C; 500 V; IGBT; LDMOSFET; LIGBT; anode shorting; breakdown voltage; dielectrically isolated devices; dual channel LEST; high temperature performance; hybrid Schottky anode structures; on-state current; parasitic thyristor latching current density; power IC; power devices; switching characteristics; threshold voltage; transconductance; turnoff times; Anodes; Conductivity; Current density; Current measurement; Dielectric measurements; Electrical resistance measurement; Temperature measurement; Threshold voltage; Thyristors; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347220

Filename

347220