DocumentCode
2312581
Title
Device physics origin and solutions to threshold voltage fluctuations in sub 130 nm CMOS incorporating halo implant
Author
Edwards, Hal ; Chatterjee, Tathagata ; Kassem, Mohamed ; Gomez, Gabriel ; Hou, Fan-Chi ; Wu, Xiaoju
Author_Institution
Texas Instrum., Inc., Dallas, TX, USA
fYear
2010
fDate
17-18 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. Layout and biasing methods are presented and shown to recover part of the matching degradation due to the halo implant.
Keywords
CMOS analogue integrated circuits; semiconductor device models; transistors; CMOS transistor; compact model; device physics theory; halo implant; size 130 nm; threshold voltage fluctuation; threshold voltage mismatch; CMOS technology; Implants; Layout; MOS devices; Semiconductor device modeling; Threshold voltage; Transistors; CMOS analog integrated circuits; Differential amplifiers; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems Workshop (DCAS), 2010 IEEE Dallas
Conference_Location
Richardson, TX
Print_ISBN
978-1-4244-9535-1
Electronic_ISBN
978-1-4244-9534-4
Type
conf
DOI
10.1109/DCAS.2010.5955031
Filename
5955031
Link To Document