Simulation and design of the silicon drag-force-gas flowsensor based on piezoresistive effect

Author

Kolchuzhin, Vladimir A. ; Shaporin, Alexey V.

Author_Institution

Dept. of SD&M, NSTU, Novosibirsk, Russia

Volume

1

fYear

2002

fDate

2002

Firstpage

627

Abstract

A silicon drag-force-gas flowsensor based on piezoresistive effect has been developed for IC technology applications. The sensor has been tested at gas flow from 20 to 500 l/h with temperature varying from 18-100°C. The experimental pattern of a silicon gas flowsensor was designed, fabricated and tested. The theoretical analysis and simulation of a flowsensor chip in an airflow was carried out for the investigation of flowsensor behavior and characteristics. The finite element method (FEM) of ANSYS-software has been employed for the complete numerical analysis of this structure.

Keywords

digital simulation; drag; electric sensing devices; elemental semiconductors; finite element analysis; flow measurement; microsensors; piezoresistive devices; silicon; 18 to 100 C; ANSYS software; FEM simulation; FLOTRAN simulation; IC technology applications; Si; Si drag-force-gas flowsensor; finite element method; numerical analysis; piezoresistive effect; Analytical models; Application specific integrated circuits; Finite element methods; Fluid flow; Gas detectors; Numerical analysis; Piezoresistance; Silicon; Temperature sensors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2002. Proceedings of IEEE

Print_ISBN

0-7803-7454-1

Type

conf

DOI

10.1109/ICSENS.2002.1037174

Filename

1037174