• DocumentCode
    2312649
  • Title

    Optical properties of Ge1−zSnz/ SixGe1−x−ySny heterostructures

  • Author

    Lin, Hai ; Chen, Robert ; Lu, Weisheng ; Huo, Yijie ; Kamins, Theodore I. ; Harris, James S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    919
  • Lastpage
    920
  • Abstract
    In their group, the authors have obtained high-quality single GeSn and SiGeSn layers by low-temperature MBE growth and characterized their structural and optical properties. The authors will describe the experimental realization and optical characterization of the GeSn/SiGeSn heterostructures.
  • Keywords
    Ge-Si alloys; molecular beam epitaxial growth; optical properties; semiconductor heterojunctions; tin alloys; Ge1-zSnz-SixGe1-x-ySny; GeSn/SiGeSn heterostructures; SiGeSn layers; high-quality single GeSn layers; low-temperature MBE growth; optical properties; structural properties; Materials; Optical buffering; Photonic band gap; Physics; Temperature measurement; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6359295
  • Filename
    6359295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2312649