DocumentCode
2312657
Title
Self-referenced poly-Si TFT amplifier readout for a linear image sensor
Author
Fujieda, I. ; Okumura, F. ; Sera, K. ; Asada, H. ; Sekine, H.
Author_Institution
Functional Devices Res. Labs., NEC Corp., Kawasaki, Japan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
587
Lastpage
590
Abstract
A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<>
Keywords
CMOS integrated circuits; calibration; image sensors; integrated circuit technology; laser beam annealing; nondestructive readout; thin film transistors; Si; excimer laser annealing; linear image sensor; low-temperature polysilicon process; polysilicon TFT amplifier; readout scheme; self-calibration; Circuits; Detectors; Image sensors; Laboratories; Optical amplifiers; Optical devices; Optical switches; Photodiodes; Prototypes; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347234
Filename
347234
Link To Document