Title :
Self-referenced poly-Si TFT amplifier readout for a linear image sensor
Author :
Fujieda, I. ; Okumura, F. ; Sera, K. ; Asada, H. ; Sekine, H.
Author_Institution :
Functional Devices Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<>
Keywords :
CMOS integrated circuits; calibration; image sensors; integrated circuit technology; laser beam annealing; nondestructive readout; thin film transistors; Si; excimer laser annealing; linear image sensor; low-temperature polysilicon process; polysilicon TFT amplifier; readout scheme; self-calibration; Circuits; Detectors; Image sensors; Laboratories; Optical amplifiers; Optical devices; Optical switches; Photodiodes; Prototypes; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347234
