DocumentCode
2312677
Title
Process and device uniformity of low-loss a-Si:H
Author
Lipka, T. ; Amthor, J. ; Müller, J.
Author_Institution
Dept. of Micro Syst. Technol., Hamburg Univ. of Technol., Hamburg, Germany
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
923
Lastpage
924
Abstract
The a-Si:H deposition process is systematically investigated in intrawafer and wafer-to-wafer experiments. Photonic ring resonators were studied within-chip and chip-to-chip, showing ±1.2nm resonance peak variations and deviations of 0.25% (intrachip) and 0.9%(interchip) for group index and FSR.
Keywords
elemental semiconductors; hydrogen; integrated optoelectronics; optical resonators; plasma CVD coatings; silicon; Si:H; deposition process; device uniformity; free-spectral range; group index; photonic ring resonators; process uniformity; wafer-to-wafer experiments; Indexes; Materials; Optical ring resonators; Photonics; Plasma measurements; Refractive index; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6359297
Filename
6359297
Link To Document