CMOS micromechanical resonator oscillator

Author

Nguyen, C.T.-C. ; Howe, R.T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

199

Lastpage

202

Abstract

A completely monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator to achieve stability and phase noise performance comparable to those of quartz crystal oscillators. It is shown that the closed-loop, steady-state oscillation amplitude of this oscillator can be controlled through the DC-bias voltage applied to the capacitively driven and sensed /spl mu/resonator. Measurements indicate a phase noise density level of -168 dBm/Hz at 5 kHz offset frequency for an oscillator carrier power of -14.5 dBm.<>

Keywords

CMOS integrated circuits; equivalent circuits; micromechanical devices; noise; oscillators; resonators; stability; CMOS micromechanical resonator oscillator; CMOS technology; DC-bias voltage; Si; monolithic high-Q oscillator; phase noise; polysilicon micromechanical resonator; steady-state oscillation amplitude; surface micromachining technology; CMOS technology; Density measurement; Frequency; Micromachining; Micromechanical devices; Phase noise; Stability; Steady-state; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347242

Filename

347242