High-density active matrix electroluminescent display using single-crystal silicon-on-insulator high-voltage IC technology

Author

Dolny, G. ; Ipri, A. ; Hsueh, F.-L. ; Stewart, R. ; Khormaei, R. ; Thayer, S. ; Keyser, T. ; Becker, G. ; Spitzer, M. ; Batty, M.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

930

Lastpage

932

Abstract

A novel, high-density, active-matrix, electroluminescent display has been fabricated using single-crystal silicon-on-insulator technology. This new approach offers many advantages including high brightness, superior speed, low power dissipation, high pixel density, high resolution, good gray-scale performance, and improved reliability.<>

Keywords

circuit reliability; electroluminescent displays; flat panel displays; integrated circuit technology; semiconductor-insulator boundaries; silicon; 200 V; SOI HV IC technology; Si; active matrix electroluminescent display; gray-scale performance; high resolution; high-density; low power dissipation; pixel density; reliability; single-crystal SOI; Active matrix technology; Conducting materials; Displays; Driver circuits; Electroluminescent devices; Integrated circuit interconnections; Logic; Power dissipation; Silicon on insulator technology; Turning;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347247

Filename

347247