DocumentCode
2312857
Title
Device characteristics of 0.1 /spl mu/m MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics
Author
Egawa, Y. ; Inoue, H. ; Yasuda, H. ; Suzuki, Y. ; Iwasa, S. ; Kawasaki, A.
Author_Institution
Electron. Res. & Dev. Labs., Nippon Steel Corp., Kanagawa, Japan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
927
Lastpage
929
Abstract
In this paper, we report for the first time on the mobility and reliability characteristics in 0.1 /spl mu/m gate MOSFET with RONO as gate dielectrics. The nand p-channel LDD FETs used in this study were fabricated on 6-inch (100) p-type silicon wafers.<>
Keywords
carrier mobility; dielectric materials; hot carriers; insulated gate field effect transistors; oxidation; reliability; 0.1 mum; 0.25 mum; 6 in; MOSFET; RONO; Si; device characteristics; gate dielectrics; mobility; n-channel LDD FETs; p-channel LDD FETs; p-type silicon wafers; reliability; reoxidized nitrided oxide; Degradation; Dielectric devices; Dielectric substrates; Hot carriers; MOSFET circuits; Oxidation; Rough surfaces; Scattering; Surface roughness; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347248
Filename
347248
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