Title :
Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs
Author :
Matloubian, M. ; Jelloian, L.M. ; Lui, M. ; Liu, T. ; Thompson, M.A.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
In this paper we report on record breakdown voltages for high-performance InP-based HEMTs. We have obtained gate-to-drain breakdown voltages of as high as 59 V (measured at 1 mA/mm of gate current) for a 500 ym wide InP-based HEMT with a gate-length of 0.25 /spl mu/m and drain-to-source spacing of 5 /spl mu/m. This is the highest breakdown voltage ever achieved for an InP-based HEMT. For a 50X0.25 /spl mu/m/sup 2/ device with a 2/spl mu/m drain-to-source spacing the typical gate-to-drain breakdown voltage is over 30 V with a current density of 520 mA/mm and a maximum transconductance of more than 570 mS/mm. This is the highest combination of breakdown voltage, current density, and transconductance ever reported for any type of FET.<>
Keywords :
III-V semiconductors; aluminium compounds; current density; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.25 mum; 5 mum; 500 mum; 59 V; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP; breakdown voltage; current density; drain-to-source spacing; gate current; gate-length; gate-to-drain breakdown voltage; gate-to-drain breakdown voltages; high-performance; highest breakdown voltage; maximum transconductance; power HEMTs; record breakdown voltages; ultra-high breakdown; Current density; Current measurement; Electric breakdown; Gallium arsenide; Gold; HEMTs; Indium phosphide; MODFETs; Thermal conductivity; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347251
