Title :
A 0.1 /spl mu/m CMOS with a step channel profile formed by ultra high vacuum CVD and in-situ doped ions
Author :
Hori, A. ; Hirai, T. ; Tanaka, M. ; Nakaoka, H. ; Umimoto, H. ; Yasuhira, M.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
In this paper, a novel O.1 /spl mu/m CMOS device with a step channel profile is proposed in order to attain low gate depletion layer capacitance and high punchthrough immunity. The step channel profile of boron for n-MOSFET, phosphorus for p-MOSFET was formed, utilizing ultra high vacuum (UHV) CVD and in-situ doped ions.<>
Keywords :
CMOS integrated circuits; boron; capacitance; chemical vapour deposition; coatings; epitaxial growth; insulated gate field effect transistors; materials preparation; phosphorus; semiconductor growth; 0.1 /spl mu/m CMOS; 0.1 mum; high punchthrough immunity; in-situ doped ions; low gate depletion layer capacitance; n-MOSFET; p-MOSFET; step channel profile; ultra high vacuum CVD; Boron; CMOS process; Electrodes; MOSFET circuits; Semiconductor epitaxial layers; Silicon; Substrates; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347253
