Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise

Author

Yong Xu ; Chuan Liu ; Scheideler, William ; Songlin Li ; Wenwu Li ; Yen-Fu Lin ; Balestra, F. ; Ghibaudo, Gerard ; Tsukagoshi, Kazuhito

Author_Institution

WPI-MANA, NIMS, Tsukuba, Japan

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1298

Lastpage

1300

Abstract

Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface´s trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.

Keywords

contact resistance; field effect transistors; organic compounds; semiconductor growth; contact damage; contact noise inspection; contact resistance; growth phase transformation; low-frequency noise; mobility resistance; pentacene deposition; pentacene transistor; pyramid; thickness-dependent charge transport; trap density; upper surface trapping; Contact resistance; Gold; Low-frequency noise; OFETs; Pentacene; Contact resistance; film thickness; low-frequency noise (LFN); mobility; organic transistors; pentacene; traps;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2277613

Filename

6594865