DocumentCode :
2313
Title :
Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise
Author :
Yong Xu ; Chuan Liu ; Scheideler, William ; Songlin Li ; Wenwu Li ; Yen-Fu Lin ; Balestra, F. ; Ghibaudo, Gerard ; Tsukagoshi, Kazuhito
Author_Institution :
WPI-MANA, NIMS, Tsukuba, Japan
Volume :
34
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
1298
Lastpage :
1300
Abstract :
Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface´s trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.
Keywords :
contact resistance; field effect transistors; organic compounds; semiconductor growth; contact damage; contact noise inspection; contact resistance; growth phase transformation; low-frequency noise; mobility resistance; pentacene deposition; pentacene transistor; pyramid; thickness-dependent charge transport; trap density; upper surface trapping; Contact resistance; Gold; Low-frequency noise; OFETs; Pentacene; Contact resistance; film thickness; low-frequency noise (LFN); mobility; organic transistors; pentacene; traps;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2277613
Filename :
6594865
Link To Document :
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