The impact of fluorine on CMOS channel length and shallow junction formation

The effects of fluorine on shallow junction formation and CMOS channel length are evaluated in this report. In this study fluorine is implanted into the device LDD region. It was found that fluorine can significantly decrease the device channel length reduction and improve short channel behavior. It was also shown that fluorine can suppress dopant diffusion to form shallower junctions. These results may provide a new approach for relaxing thermal budget constraints and reducing short channel effects for scaling CMOS technologies to smaller dimensions.<>