• DocumentCode
    2313149
  • Title

    A new toroidal TFT structure for future generation SRAMs

  • Author

    Hayden, J.D. ; Cooper, K.J. ; Roth, S.S. ; Kirsch, H.C.

  • Author_Institution
    Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
  • fYear
    1993
  • fDate
    5-8 Dec. 1993
  • Firstpage
    825
  • Lastpage
    828
  • Abstract
    A new toroidal TFT structure has been developed for future generation SRAM products. This new TFT provides excellent device performance at scaled power supply voltages and offers significant savings in bitcell area.<>
  • Keywords
    MOS integrated circuits; SRAM chips; integrated circuit technology; thin film transistors; SRAMs; bitcell area; device performance; scaled power supply voltages; toroidal TFT structure; Dielectrics; Etching; Laboratories; MOSFETs; Power supplies; Random access memory; Research and development; Silicon; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-1450-6
  • Type

    conf

  • DOI
    10.1109/IEDM.1993.347272
  • Filename
    347272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2313149