Title :
A new toroidal TFT structure for future generation SRAMs
Author :
Hayden, J.D. ; Cooper, K.J. ; Roth, S.S. ; Kirsch, H.C.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
A new toroidal TFT structure has been developed for future generation SRAM products. This new TFT provides excellent device performance at scaled power supply voltages and offers significant savings in bitcell area.<>
Keywords :
MOS integrated circuits; SRAM chips; integrated circuit technology; thin film transistors; SRAMs; bitcell area; device performance; scaled power supply voltages; toroidal TFT structure; Dielectrics; Etching; Laboratories; MOSFETs; Power supplies; Random access memory; Research and development; Silicon; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347272
