Title :
Soft error rate and stored charge requirements in advanced high-density SRAMs
Author :
Lage, C. ; Burnett, D. ; McNelly, T. ; Baker, K. ; Bormann, A. ; Dreier, D. ; Soorholtz, V.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
This work presents a quantitative model which attributes most soft errors in dense SRAMs not to alpha particles as is commonly accepted, but to cosmic ray events. This work also elucidates for the first time the stored charge required in SRAM cells to achieve acceptable soft error rates. Enhancements to add capacitance are necessary at the 4 Megabit level and beyond. One method of enhancing the cell capacitance is reported in detail.<>
Keywords :
BiCMOS integrated circuits; SRAM chips; integrated circuit testing; radiation effects; 4 Mbit; cell capacitance; cosmic ray events; high-density SRAMs; quantitative model; soft error rate; stored charge requirements; Alpha particles; Area measurement; Capacitance; Circuits; Current measurement; Error analysis; Particle measurements; Random access memory; Semiconductor device packaging; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347273
