DocumentCode
2313335
Title
The effect of carrier capture on the modulation bandwidth of quantum well lasers
Author
Grupen, M. ; Kosinovsky, G. ; Hess, K.
Author_Institution
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
609
Lastpage
612
Abstract
Effects of electron and hole transport on modulation response and ways to compute them are discussed. A brief overview of the self-consistent simulation of quantum well lasers is presented along with a more detailed discussion of carrier capture. The modulation responses of a test laser structure with different carrier capture rates are presented. The results are explained by examining free carrier and electric field distributions calculated for the different cases.<>
Keywords
carrier mobility; electron traps; hole traps; optical modulation; semiconductor lasers; capture rates; carrier capture; electric field distribution; electron transport; free carrier distribution; hole transport; modulation bandwidth; modulation responses; quantum well lasers; self-consistent simulation; Bandwidth; Carrier confinement; Computational modeling; Laser theory; Poisson equations; Quantum mechanics; Quantum well lasers; Radiative recombination; Semiconductor lasers; Thermionic emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347285
Filename
347285
Link To Document