SOG micromechanical resonator utilizing single crystal Si and CMOS ASIC

Author

Chiu, Sheng-Ren ; Chen, Jen-Yi ; Lin, Shih-Chieh ; Teng, Li-Tao ; Lin, Shih-Ting ; Shiau, Jieh-Ling ; Hsu, Yu-Wen ; Su, Yan-Kuin

Author_Institution

Microsyst. Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2010

fDate

20-22 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, a micromechanical resonator utilizing single crystal Si and CMOS ASIC is presented. First, the critical parameters are optimized by theoretical calculation and fine tuned by finite-element-analysis (FEM). Then, SOG-bulk micromachining and deep reactive ion etching (DRIE) are adopted to fabricate the resonator as well as a glass wafer is used as the substrate to support the device, metal interconnections and signal I/O. The structure size of the designed resonator is 0.46 mm × 0.34 mm with 3 um minimum gap. Finally, a modified pierce oscillator ASIC and a temperature compensative methodology is developed to accomplish fully integrated reference oscillator design.

Keywords

CMOS integrated circuits; application specific integrated circuits; elemental semiconductors; finite element analysis; integrated circuit interconnections; micromachining; micromechanical resonators; oscillators; silicon; sputter etching; CMOS ASIC; SOG bulk micromachining; SOG micromechanical resonator; deep reactive ion etching; finite element analysis; integrated reference oscillator; metal interconnections; pierce oscillator ASIC; signal I/O; single crystal silicon; Application specific integrated circuits; CMOS integrated circuits; Crystals; Glass; Micromechanical devices; Oscillators; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International

Conference_Location

Taipei

ISSN

2150-5934

Print_ISBN

978-1-4244-9783-6

Electronic_ISBN

2150-5934

Type

conf

DOI

10.1109/IMPACT.2010.5699631

Filename

5699631