Title :
Two-stage hot-carrier degradation and its impact on submicron LDD NMOSFET lifetime prediction
Author :
Vei-Han Chan ; Chung, J.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The device degradation of oxide-spacer LDD NMOS transistors due to hot carriers is studied in detail. It is found that the observed saturation in the degradation time dependence is due to a combination of an increase in the series resistance in the lightly-doped drain region, and a reduction of the carrier mobility in the channel and subdiffusion regions. Because the increase in series resistance eventually saturates, an asymptotic degradation rate coefficient can be used to extract a more accurate and consistent value of LDD NMOS lifetime.<>
Keywords :
carrier mobility; hot carriers; insulated gate field effect transistors; reliability; NMOSFET lifetime prediction; asymptotic degradation rate coefficient; carrier mobility; degradation time dependence; device degradation; lightly-doped drain region; n-channel MOSFET; oxide-spacer NMOS transistors; series resistance; submicron LDD NMOSFET; two-stage hot-carrier degradation; Charge pumps; Degradation; Electric resistance; Electrical resistance measurement; Hot carriers; Interface states; MOS devices; MOSFET circuits; Stress; Voltage measurement;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347298
