Title :
Characterizing subthreshold behavior in poly-Si TFTs based on interface trap states
Author :
Hayashi, F. ; Ikeuchi, H. ; Kitakata, M. ; Sasaki, T.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
The subthreshold behavior in poly-Si TFTs (Thin Film Transistors) has been analyzed in detail. It has been demonstrated that the high subthreshold slope factor and the back bias dependence of the subthreshold characteristics can be reproduced by the model based on Si-SiO/sub 2/ interface trap states. The importance of reducing the interface trap density in poly-Si TFTs is shown.<>
Keywords :
electron traps; electronic density of states; elemental semiconductors; interface electron states; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; thin film transistors; Si-SiO/sub 2/; Si-SiO/sub 2/ interface; back bias dependence; interface trap density; interface trap states; poly-Si TFTs; subthreshold behavior; subthreshold characteristics; subthreshold slope factor; Capacitance measurement; Density measurement; Grain boundaries; Grain size; MOSFETs; Semiconductor films; Silicon; Thin film transistors; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347301
