DocumentCode
2313557
Title
Description of the bias dependent overlap capacitance at LDD MOSFETs for circuit applications
Author
Klein, P. ; Hoffmann, K. ; Lemaitre, B.
Author_Institution
Univ. of Bundeswehr, Munich, Germany
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
493
Lastpage
496
Abstract
An analytical charge description for the bias dependent overlap regions at MOSFETs with LDD(S) configuration for circuit applications is presented. Furthermore an indirect method for the extraction of the LDD(S) parameters is derived. By simulating a fundamental amplifier circuit, it is demonstrated, that an incorrect description of the bias dependent overlap capacitances of LDD MOSFETs can have a profound effect on simulation results.<>
Keywords
capacitance; circuit analysis computing; field effect transistor circuits; insulated gate field effect transistors; LDD MOSFETs; amplifier circuit; analytical charge description; bias dependent overlap capacitance; circuit applications; simulation; Analytical models; Capacitance measurement; Channel bank filters; Charge carrier processes; Circuit simulation; Doping; Equations; FETs; MOSFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347303
Filename
347303
Link To Document