Title :
Description of the bias dependent overlap capacitance at LDD MOSFETs for circuit applications
Author :
Klein, P. ; Hoffmann, K. ; Lemaitre, B.
Author_Institution :
Univ. of Bundeswehr, Munich, Germany
Abstract :
An analytical charge description for the bias dependent overlap regions at MOSFETs with LDD(S) configuration for circuit applications is presented. Furthermore an indirect method for the extraction of the LDD(S) parameters is derived. By simulating a fundamental amplifier circuit, it is demonstrated, that an incorrect description of the bias dependent overlap capacitances of LDD MOSFETs can have a profound effect on simulation results.<>
Keywords :
capacitance; circuit analysis computing; field effect transistor circuits; insulated gate field effect transistors; LDD MOSFETs; amplifier circuit; analytical charge description; bias dependent overlap capacitance; circuit applications; simulation; Analytical models; Capacitance measurement; Channel bank filters; Charge carrier processes; Circuit simulation; Doping; Equations; FETs; MOSFETs; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347303
