DocumentCode
2313585
Title
Compact MOS modeling for analog circuit simulation
Author
Velghe, R.M.D.A. ; Klaassen, D.B.M. ; Klaassen, F.M.
Author_Institution
Philips Res. Labs., Eindhoven Univ. of Technol., Netherlands
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
485
Lastpage
488
Abstract
Analog applications of MOS transistors in integrated circuits impose enhanced requirements on the compact MOS models used in circuit simulators. Here we present for the Philips MOS MODEL 9 the successful confrontation with these analog requirements, the scaling of parameters with geometry, the accuracy of the model over the whole geometry range of a process, its capabilities in the description of various processes at least down to 0.35 /spl mu/m and a comparison with advanced analog models available in commercial circuit simulators.<>
Keywords
MOS integrated circuits; circuit analysis computing; linear integrated circuits; 0.35 micron; MOS transistors; Philips MOS MODEL 9; analog circuit simulation; circuit simulators; compact MOS models; integrated circuits; Analog circuits; Benchmark testing; Circuit simulation; Circuit testing; Integrated circuit modeling; Laboratories; MOSFETs; Semiconductor process modeling; Solid modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347305
Filename
347305
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