Title :
Sensitivity of field isolation profiles to active pattern
Author :
Kenkare, P.U. ; Pfiester, J.R. ; Hayden, J.D. ; Subrahmanyan, R. ; Hegde, R.I. ; Kaushik, V.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
The bird´s beak profile for LOCOS-based isolations is shown to be a strong function of the patterned nitride width. In particular, the bird´s beak height is found to be much smaller for intermediate widths (/spl sim/0.6 /spl mu/m) than for either very wide or very narrow nitride lines. These width-dependent phenomena are explained using simulation. Furthermore, the use of Atomic Force Microscopy (AFM) is presented as a convenient approach for quantifying the 2-D encroachment effects common to all LOCOS-based schemes.<>
Keywords :
MOS integrated circuits; SRAM chips; VLSI; atomic force microscopy; integrated circuit technology; integrated circuit testing; oxidation; 0.6 micron; 2D encroachment effects; LOCOS-based isolations; MOS IC technology; SRAMs; active pattern; atomic force microscopy; bird´s beak profile; field isolation profiles; intermediate widths; isolation technology; nitride lines; patterned nitride width; Atomic force microscopy; Birds; Circuit simulation; Computational geometry; Laboratories; MOS devices; Research and development; Scanning electron microscopy; Stress; Substrates;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347306
