DocumentCode
2313634
Title
Simulation of RF inductor by the modified ADI-FDTD method
Author
Hwang, Jiunn-Nan ; Chen, Fu-Chiarng
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
fYear
2007
fDate
9-15 June 2007
Firstpage
2329
Lastpage
2332
Abstract
In this paper, the modified PML conductivity profiles are used to improve the stability of this scheme. The electromagnetic effects of the VLSI circuits in frequency domain is studied. Numerical simulations of the RF inductor will be performed to show the efficiency and accuracy of the proposed scheme.
Keywords
VLSI; finite difference time-domain analysis; frequency-domain analysis; inductors; RF inductor simulation; VLSI circuits; electromagnetic effects; frequency domain; modified alternating direction implicit-FDTD method; perfectly matched layer; Circuit simulation; Circuit stability; Conductivity; Finite difference methods; Frequency domain analysis; Inductors; Numerical simulation; Radio frequency; Time domain analysis; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-0877-1
Electronic_ISBN
978-1-4244-0878-8
Type
conf
DOI
10.1109/APS.2007.4395998
Filename
4395998
Link To Document