Lightly N/sub 2/O nitrided dielectrics grown in a conventional furnace for E/sup 2/PROM and 0.25 /spl mu/m CMOS

Author

Pomp, H.G. ; Woerlee, P.H. ; Woltjer, R. ; Paulzen, G. ; Lifka, H. ; Kuiper, A.E.T. ; de Zaldivar, J.S. ; Vecsernyes, S.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

463

Lastpage

465

Abstract

For deep-submicron CMOS transistors and FLOTOX E/sup 2/PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N/sup 2/O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.<>

Keywords

CMOS integrated circuits; EPROM; circuit reliability; dielectric thin films; integrated circuit technology; integrated memory circuits; nitridation; nitrogen compounds; 0.25 micron; 6 to 10 nm; FLOTOX E/sup 2/PROM devices; N/sub 2/O; conventional furnace growth; deep-submicron CMOS transistors; dielectric layer growth; lightly N/sub 2/O nitrided dielectrics; low-thermal budget processing; nitridation technology; reliability; two-step process; Boron; CMOS technology; Degradation; Dielectric devices; Dielectric measurements; Furnaces; MOS devices; PROM; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347310

Filename

347310