Title :
Lightly N/sub 2/O nitrided dielectrics grown in a conventional furnace for E/sup 2/PROM and 0.25 /spl mu/m CMOS
Author :
Pomp, H.G. ; Woerlee, P.H. ; Woltjer, R. ; Paulzen, G. ; Lifka, H. ; Kuiper, A.E.T. ; de Zaldivar, J.S. ; Vecsernyes, S.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
For deep-submicron CMOS transistors and FLOTOX E/sup 2/PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N/sup 2/O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.<>
Keywords :
CMOS integrated circuits; EPROM; circuit reliability; dielectric thin films; integrated circuit technology; integrated memory circuits; nitridation; nitrogen compounds; 0.25 micron; 6 to 10 nm; FLOTOX E/sup 2/PROM devices; N/sub 2/O; conventional furnace growth; deep-submicron CMOS transistors; dielectric layer growth; lightly N/sub 2/O nitrided dielectrics; low-thermal budget processing; nitridation technology; reliability; two-step process; Boron; CMOS technology; Degradation; Dielectric devices; Dielectric measurements; Furnaces; MOS devices; PROM; Stress; Testing;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347310
