Title :
A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices
Author :
Manchanda, L. ; Weber, G.R. ; Mansfields, W. ; Boulin, D.M. ; Krisch, K. ; Kim, Y.O. ; Storz, R. ; Moriya, N. ; Luftman, H.S. ; Feldman, L.C. ; Green, M.L. ; Kistler, R.C. ; Lee, J.T.C. ; Klemens, F.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We report the fabrication and device characteristics of a 50 /spl Aring/ thick dual-layer gate dielectric with high interface quality (D/sub it/ and Q/sub f/ /spl sim/10/sup 10/ cm/sup 2/) and capable of retarding boron penetration. This dual-layer dielectric is formed by low temperature CVD deposition of a /spl sim/40 /spl Aring/ thick oxynitride layer, through which slow O/sub 2/ diffusion is used to grow a /spl sim/10 /spl Aring/ thick SiO/sub 2/ at the interface. The small thickness of the SiO/sub 2/ layer reduces the oxidation time at high temperature, thus reducing the required thermal budget. The top oxynitride retards boron penetration and the thin SiO/sub 2/ layer provides a high quality interface. The channel mobility of NMOS devices with this dual dielectric is equal to the mobility of devices with a RTO dielectric grown at 950/spl deg/C.<>
Keywords :
CMOS integrated circuits; CVD coatings; boron; chemical vapour deposition; dielectric thin films; diffusion in solids; insulated gate field effect transistors; integrated circuit technology; interface electron states; oxidation; semiconductor-insulator boundaries; silicon compounds; 0.1 to 0.25 micron; 50 angstrom; B penetration; B retarding layer; NMOS devices; O/sub 2/; PMOS devices; Si-SiO/sub 2/-SiON; channel mobility; deep-submicron devices; device characteristics; dual-layer gate dielectric; fabrication; high interface quality; low temperature CVD deposition; oxidation time; oxynitride layer; slow O/sub 2/ diffusion; thin gate dielectric; Biomembranes; Boron; Circuits; Dielectric devices; Fabrication; MOS capacitors; MOS devices; Oxidation; Silicon compounds; Temperature;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347311
