DocumentCode
2313683
Title
Poly-ridge emitter transistor (FRET): simple low-power option to a bipolar process
Author
van der Wel, W. ; Koster, R. ; Jansen, S. ; Bladt, E. ; Hurkx, F. ; Baltus, P.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
453
Lastpage
456
Abstract
A new bipolar transistor structure is presented combining high-frequency performance with low power consumption. Processing is simple; only conventional steps are used. A comparison between the PRET and a similarly manufactured single-poly structure is made, involving simulations on device and circuit level and measurements on actual devices. The same high-frequency performance is obtained, the PRET consuming half the power of the single-poly device.<>
Keywords
bipolar integrated circuits; bipolar transistors; circuit analysis computing; digital simulation; semiconductor device models; bipolar process; bipolar transistor structure; circuit level; device level; device measurements; high-frequency performance; low-power option; poly-ridge emitter transistor; simulations; Bipolar transistors; Circuit simulation; Energy consumption; Frequency; Impedance; Laboratories; Noise figure; Telecommunications; Telephony; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347312
Filename
347312
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