Title :
Tenth micron p-MOSFET´s with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD
Author :
Ohguro, T. ; Yamada, K. ; Sugiyama, N. ; Usuda, K. ; Akasaka, Y. ; Yoshitomi, T. ; Fiegna, Claudio ; Ono, M. ; Saito, M. ; Iwai, H.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We have, for the first time, demonstrated silicon MOSFET´s with an ultra-thin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, so it is easily possible to adjust the threshold voltage of the p-MOSFET´s even in the case of n-type polysilicon gates. It was confirmed that choosing an ultra-thin epitaxial layer-in the 10 nm range-leads to suppression of the short-channel effects in n-type polysilicon gate buried-channel MOSFET´s, while maintaining an appropriate value of threshold voltage.<>
Keywords :
boron; elemental semiconductors; insulated gate field effect transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; 10 nm; Si:B; buried-channel MOSFET; channel region doping; epitaxial layer thickness; n-type polysilicon gates; p-MOSFETs; short-channel effects; threshold voltage; ultra-high-vacuum CVD; ultra-thin epitaxial channel layer; Boron; Epitaxial growth; Epitaxial layers; Impurities; MOSFET circuits; Predictive models; Silicon; Substrates; Temperature control; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347317
