Tenth micron p-MOSFET´s with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD

Author

Ohguro, T. ; Yamada, K. ; Sugiyama, N. ; Usuda, K. ; Akasaka, Y. ; Yoshitomi, T. ; Fiegna, Claudio ; Ono, M. ; Saito, M. ; Iwai, H.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

433

Lastpage

436

Abstract

We have, for the first time, demonstrated silicon MOSFET´s with an ultra-thin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, so it is easily possible to adjust the threshold voltage of the p-MOSFET´s even in the case of n-type polysilicon gates. It was confirmed that choosing an ultra-thin epitaxial layer-in the 10 nm range-leads to suppression of the short-channel effects in n-type polysilicon gate buried-channel MOSFET´s, while maintaining an appropriate value of threshold voltage.<>

Keywords

boron; elemental semiconductors; insulated gate field effect transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; 10 nm; Si:B; buried-channel MOSFET; channel region doping; epitaxial layer thickness; n-type polysilicon gates; p-MOSFETs; short-channel effects; threshold voltage; ultra-high-vacuum CVD; ultra-thin epitaxial channel layer; Boron; Epitaxial growth; Epitaxial layers; Impurities; MOSFET circuits; Predictive models; Silicon; Substrates; Temperature control; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347317

Filename

347317