DocumentCode
2313775
Title
Fabrication of quantum dots using in-situ etching and regrowth during MBE growth
Author
Der-Cherng Liu ; Chien-Ping Lee ; Shyi-Long Shy
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
427
Lastpage
429
Abstract
A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the blue shift as a result of the quantum confinement effect.<>
Keywords
etching; masks; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; MBE growth; built-in evaporation mask; fabrication technique; in-situ etching; photoluminescence spectra; quantum confinement effect; regrowth; semiconductor quantum dots; thermal etching; Etching; Fabrication; Gallium arsenide; Holography; Indium gallium arsenide; Lithography; Molecular beam epitaxial growth; Quantum dots; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347318
Filename
347318
Link To Document