Ultra-compact wideband Ka-band CMOS hybrid ring

Author

Chirala, M. ; Nguyen, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX

fYear

2009

fDate

6-9 May 2009

Firstpage

834

Lastpage

835

Abstract

A new microstrip ring hybrid has been developed in Ka-band (26.5-40 GHz) using multiple metal layers in a standard 0.25-mum RF/mixed signal CMOS process. The developed ring hybrid has -3.1 to -3.18 dB through, -5.1 to -5.7 dB coupling, and more than 17 dB isolation and 10 dB return loss across 25-35 GHz while occupying merely 282 times 314 mum.

Keywords

CMOS integrated circuits; microstrip circuits; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; multilayers; ultra wideband technology; frequency 25 GHz to 35 GHz; frequency 26.5 GHz to 40 GHz; loss 10 dB; microstrip ring hybrid; multiple metal layers; size 0.25 mum; standard RF-mixed signal CMOS process; ultra-compact wideband Ka-band CMOS hybrid ring; CMOS process; CMOS technology; Circuits; Impedance; Inverters; Microstrip; Nonhomogeneous media; Radio frequency; Silicon; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on

Conference_Location

Pattaya, Chonburi

Print_ISBN

978-1-4244-3387-2

Electronic_ISBN

978-1-4244-3388-9

Type

conf

DOI

10.1109/ECTICON.2009.5137175

Filename

5137175

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2313786