DocumentCode :
2313786
Title :
Ultra-compact wideband Ka-band CMOS hybrid ring
Author :
Chirala, M. ; Nguyen, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX
fYear :
2009
fDate :
6-9 May 2009
Firstpage :
834
Lastpage :
835
Abstract :
A new microstrip ring hybrid has been developed in Ka-band (26.5-40 GHz) using multiple metal layers in a standard 0.25-mum RF/mixed signal CMOS process. The developed ring hybrid has -3.1 to -3.18 dB through, -5.1 to -5.7 dB coupling, and more than 17 dB isolation and 10 dB return loss across 25-35 GHz while occupying merely 282 times 314 mum.
Keywords :
CMOS integrated circuits; microstrip circuits; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; multilayers; ultra wideband technology; frequency 25 GHz to 35 GHz; frequency 26.5 GHz to 40 GHz; loss 10 dB; microstrip ring hybrid; multiple metal layers; size 0.25 mum; standard RF-mixed signal CMOS process; ultra-compact wideband Ka-band CMOS hybrid ring; CMOS process; CMOS technology; Circuits; Impedance; Inverters; Microstrip; Nonhomogeneous media; Radio frequency; Silicon; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on
Conference_Location :
Pattaya, Chonburi
Print_ISBN :
978-1-4244-3387-2
Electronic_ISBN :
978-1-4244-3388-9
Type :
conf
DOI :
10.1109/ECTICON.2009.5137175
Filename :
5137175
Link To Document :
بازگشت