Design of an ultra-wideband power-efficient distributed low-noise amplifier

Author

Guan, X. ; Nguyen, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA

fYear

2009

fDate

6-9 May 2009

Firstpage

836

Lastpage

837

Abstract

An ultra-wideband (UWB) distributed amplifier implementing high-gain, low-power-consumption gain-cells is presented. The distributed amplifier was fabricated in TSMC 0.18-mum CMOS process and achieved an average power gain of around 10 dB, input return loss of less than -20 dB, and noise figure of 3.3-6.1 dB with a power consumption of only 19.6 mW over the entire UWB range of 3.1-10.6 GHz. In the high-gain operating mode that consumed 100 mW, the distributed amplifier exhibited a high gain of 16 dB with 3.2-6-dB noise figure over the UWB range.

Keywords

MMIC amplifiers; distributed amplifiers; field effect MMIC; integrated circuit design; low noise amplifiers; ultra wideband technology; wideband amplifiers; CMOS process; UWB range; distributed low-noise amplifier fabrication; frequency 3.1 GHz to 10.6 GHz; high-gain operating mode; noise figure 3.3 dB to 6.1 dB; power 100 mW; power 19.6 mW; size 0.18 mum; ultra-wideband power-efficient amplifier design; Distributed amplifiers; Energy consumption; Gain measurement; Loss measurement; Low-noise amplifiers; Noise figure; Power measurement; Semiconductor device measurement; Transconductance; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on

Conference_Location

Pattaya, Chonburi

Print_ISBN

978-1-4244-3387-2

Electronic_ISBN

978-1-4244-3388-9

Type

conf

DOI

10.1109/ECTICON.2009.5137176

Filename

5137176