Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes

Author

Alien, S.T. ; Reddy, H. ; Rodwell, M.J.W. ; Smith, R.P. ; Martin, S.C. ; Lui, John C.S. ; Muller, R.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

407

Lastpage

410

Abstract

0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunnel diodes were fabricated; from their measured DC and microwave parameters, and including the effect of the quantum well lifetime, a maximum frequency of oscillation of 900 GHz is computed. To the authors´ knowledge this is the highest reported for any AlAs/GaAs resonant tunnel diode.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; aluminium compounds; equivalent circuits; gallium arsenide; negative resistance; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; submillimetre wave devices; tunnel diodes; 0.1 micron; 900 GHz; AlAs-GaAs; DC parameters; THF; maximum frequency of oscillation; microwave parameters; quantum well lifetime; resonant tunnel diodes; submicron Schottky-collector RTD; Contact resistance; Electrons; Frequency; Gallium arsenide; Ohmic contacts; Resonant tunneling devices; Schottky barriers; Schottky diodes; Semiconductor diodes; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347323

Filename

347323