Title :
A high aperture and high density a-Si TFT-LCD with a new pixel structure
Author :
Toeda, H. ; Tsuji, Y. ; Murooka, M. ; Sugahara, A. ; Ikeda, M. ; Suzuki, N.K.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Tokyo, Japan
Abstract :
The authors have developed a TFT-LCD with new pixel structure which enhances aperture ratio. The new structure has a transparent electrode between the signal line and the pixel electrode, which shields the capacitive coupling between the signal line and the pixel electrode and reduces the liquid crystal disclination lines caused by the transverse electric field between them. A high aperture ratio of 40% has been achieved on a 40 /spl mu/m square pixel, which is the largest value for this size of a-Si TFT-LCD.<>
Keywords :
amorphous semiconductors; elemental semiconductors; liquid crystal displays; optical projectors; semiconductor technology; silicon; thin film transistors; 40 micron; Si; TFT-LCD; a-Si TFT; aperture ratio; capacitive coupling; liquid crystal disclination lines; pixel structure; signal line; transparent electrode; transverse electric field; Apertures; Electrodes; Glass; Insulation; Liquid crystal displays; Pixel; Plasma applications; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347324
