Title :
An LCD addressed by a-Si:H TFTs with peripheral poly-Si TFT circuits
Author :
Tanaka, T. ; Asuma, H. ; Ogawa, K. ; Shinagawa, Y. ; Ono, K. ; Konishi, N.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
Poly-Si TFTs of an inverted staggered structure are fabricated by peripheral laser annealing of plasma CVD a-Si:H films on SiN gate insulator. The side contact structure improves the TFT characteristics resulting in mobility of 20 cm/sup 2Vs and on/off ratio of 10/sup 6/. The fabrication process, carried out below 300/spl deg/C, is compatible with conventional a-Si TFT processes. The LCD using a switch matrix of poly Si TFTs has good performance and reduces the number of driver ICs by half.<>
Keywords :
amorphous semiconductors; elemental semiconductors; field effect integrated circuits; hydrogen; insulated gate field effect transistors; integrated circuit technology; laser beam annealing; liquid crystal displays; plasma CVD; plasma CVD coatings; silicon; thin film transistors; 300 C; LCD; Si:H-SiN; SiN gate insulator; TFT characteristics; amorphous Si:H TFTs; driver IC reduction; fabrication process; inverted staggered structure; laser annealing; mobility; peripheral poly-Si TFT circuits; plasma CVD a-Si:H films; polycrystalline Si; side contact structure; switch matrix; Annealing; Circuits; Electrodes; Glass; Insulation; Optical device fabrication; Plasma temperature; Silicon compounds; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347327
