Title :
Determination of carrier mobilities and densities from galvanomagnetic coefficients in undoped Bi0.96Sb0.04 alloy
Author :
Lenoir, B. ; Selme, M.O. ; Demouge, A. ; Scherrer, H. ; Ravich, Yu.I. ; Ivanov, Yu.V.
Author_Institution :
Lab. de Phys. des Mater., Ecole des Mines, Nancy, France
Abstract :
Carrier mobilities and densities were calculated in Bi0.96 Sb0.04 alloy in the temperature range 78-300 K. The theoretical model takes into account the particular band structure. The non parabolicity of the conduction band and the complex carrier scattering mechanisms. The adjustable parameters are found by the least-squares method from the experimental values of the twelve galvanomagnetic coefficients in weak magnetic field and of the two components of the thermopower. Calculated values of the Hall and magnetoresistance factors of electrons show a substantial deviation from unity
Keywords :
Hall effect; antimony alloys; band structure; bismuth alloys; carrier density; carrier mobility; conduction bands; magnetoresistance; semiconductor materials; thermoelectric power; 78 K to 300 K; Bi0.96Sb0.04; band structure; carrier densities; carrier mobilities; complex carrier scattering mechanisms; conduction band; galvanomagnetic coefficients; least-squares method; magnetoresistance factors; Bismuth; Charge carrier processes; Conductivity; Electrons; Light scattering; Magnetoresistance; Temperature dependence; Temperature distribution; Tensile stress; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667076
