DocumentCode :
2314004
Title :
Microstructure and thermoelectric properties of arc-melted silicon borides
Author :
Chen, Lidong ; Goto, Takashi ; Li, Jianhui ; Aoyagi, Eiji ; Hirai, Toshio
Author_Institution :
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
215
Lastpage :
218
Abstract :
Silicon borides in a boron content range of 80 to 94 mol% were prepared by arc-melting. As-melted specimens consisted of SiBn (hexagonal, n=14-49) and free silicon. The free silicon content decreased with increasing boron content in raw materials. The arc-melted specimens were annealed in an argon atmosphere at 1663 K. By annealing for 1.8 ks, SiB4 phase formed at the Si-SiBn boundary. By annealing for more than 5.4 ks, SiB6 phase formed and SiB4 phase disappeared. SiBn content increased with increasing annealing time. The annealing for 5.4 ks caused a great increase of the Seebeck coefficient
Keywords :
annealing; crystal microstructure; semiconductor materials; silicon compounds; thermal conductivity; thermoelectric power; 1663 K; 5.4 ks; Seebeck coefficient; SiB; annealing; arc-melted SiBn; microstructure; thermoelectric properties; Annealing; Argon; Boron; Conductivity measurement; Microstructure; Silicon; Temperature; Thermal conductivity; Thermoelectricity; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.667084
Filename :
667084
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2314004
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