Microstructure and thermoelectric properties of arc-melted silicon borides

Author

Chen, Lidong ; Goto, Takashi ; Li, Jianhui ; Aoyagi, Eiji ; Hirai, Toshio

Author_Institution

Inst. of Mater. Res., Tohoku Univ., Sendai, Japan

fYear

1997

fDate

26-29 Aug 1997

Firstpage

215

Lastpage

218

Abstract

Silicon borides in a boron content range of 80 to 94 mol% were prepared by arc-melting. As-melted specimens consisted of SiB_n (hexagonal, n=14-49) and free silicon. The free silicon content decreased with increasing boron content in raw materials. The arc-melted specimens were annealed in an argon atmosphere at 1663 K. By annealing for 1.8 ks, SiB₄ phase formed at the Si-SiB_n boundary. By annealing for more than 5.4 ks, SiB⁶ phase formed and SiB₄ phase disappeared. SiB_n content increased with increasing annealing time. The annealing for 5.4 ks caused a great increase of the Seebeck coefficient

Keywords

annealing; crystal microstructure; semiconductor materials; silicon compounds; thermal conductivity; thermoelectric power; 1663 K; 5.4 ks; Seebeck coefficient; SiB; annealing; arc-melted SiB_n; microstructure; thermoelectric properties; Annealing; Argon; Boron; Conductivity measurement; Microstructure; Silicon; Temperature; Thermal conductivity; Thermoelectricity; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667084

Filename

667084