• DocumentCode
    2314018
  • Title

    Silicon carbide for MEMS and NEMS - an overview

  • Author

    Zorman, Christian A. ; Mehregany, Mehran

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    1109
  • Abstract
    Silicon carbide has long been known for its excellent mechanical, electrical and chemical properties, making it a leading material for microfabricated sensors and actuators designed for environments too harsh for Si-based devices. However many of the properties that make SiC attractive for harsh environment applications make it a challenging material to micromachine. Recent advances in deposition and patterning technologies have enabled the fabrication of 3C-SiC micro- and nanoelectromechanical devices with a level of sophistication comparable with Si devices. This paper presents a review of select advances used in the fabrication of SiC MEMS and NEMS structures.
  • Keywords
    microactuators; micromachining; micromechanical devices; microsensors; nanoelectronics; silicon compounds; wide band gap semiconductors; MEMS; NEMS; SiC; deposition technologies; harsh environments; microfabricated actuators; microfabricated sensors; micromachining; nanoelectromechanical devices; patterning technologies; Actuators; Chemical sensors; Chemical technology; Fabrication; Mechanical factors; Mechanical sensors; Micromechanical devices; Nanoelectromechanical systems; Nanoscale devices; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2002. Proceedings of IEEE
  • Print_ISBN
    0-7803-7454-1
  • Type

    conf

  • DOI
    10.1109/ICSENS.2002.1037269
  • Filename
    1037269