DocumentCode
2314018
Title
Silicon carbide for MEMS and NEMS - an overview
Author
Zorman, Christian A. ; Mehregany, Mehran
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Volume
2
fYear
2002
fDate
2002
Firstpage
1109
Abstract
Silicon carbide has long been known for its excellent mechanical, electrical and chemical properties, making it a leading material for microfabricated sensors and actuators designed for environments too harsh for Si-based devices. However many of the properties that make SiC attractive for harsh environment applications make it a challenging material to micromachine. Recent advances in deposition and patterning technologies have enabled the fabrication of 3C-SiC micro- and nanoelectromechanical devices with a level of sophistication comparable with Si devices. This paper presents a review of select advances used in the fabrication of SiC MEMS and NEMS structures.
Keywords
microactuators; micromachining; micromechanical devices; microsensors; nanoelectronics; silicon compounds; wide band gap semiconductors; MEMS; NEMS; SiC; deposition technologies; harsh environments; microfabricated actuators; microfabricated sensors; micromachining; nanoelectromechanical devices; patterning technologies; Actuators; Chemical sensors; Chemical technology; Fabrication; Mechanical factors; Mechanical sensors; Micromechanical devices; Nanoelectromechanical systems; Nanoscale devices; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037269
Filename
1037269
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