Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 /spl mu/m dual gate CMOS

We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.25 /spl mu/m dual gate CMOS. It was found that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was found that Ti-salicided shallow junction for 0.25 /spl mu/m CMOS can be successfully formed without increasing the junction leakage current.<>