Title :
MOSFET reverse short channel effect due to silicon interstitial capture in gate oxide
Author :
Jacobs, H. ; von Schwerin, A. ; Scharfetter, D. ; Lau, F.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
We present a new mechanism for the anomalous threshold voltage roll-off behavior of submicron MOSFETs, commonly referred to as reverse short channel effect (RSCE). We assume in our model that interstitials injected into the gate oxide give rise to a position dependent charge distribution along the Si-SiO/sub 2/-interface. Simulations based on this model are in good agreement with measurements of the RSCE and its independence of substrate bias which is observed for MOSFETs with nearly flat channel profiles.<>
Keywords :
insulated gate field effect transistors; interstitials; semiconductor device models; semiconductor-insulator boundaries; silicon; Si interstitial capture; Si-SiO/sub 2/; anomalous threshold voltage rolloff behavior; gate oxide; model; position dependent charge distribution; reverse short channel effect; submicron MOSFET; Boron; Delay effects; Doping profiles; Implants; Jacobian matrices; MOSFET circuits; Research and development; Silicon; Threshold voltage; USA Councils;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347346
