DocumentCode
2314307
Title
Electrical sensing properties of polypyrrole
Author
Campos, M.
Author_Institution
UNIP - Univ. Paulista, Ribeirao Preto, Brazil
Volume
2
fYear
2002
fDate
2002
Firstpage
1219
Abstract
Thin films of polypyrrole doped with dodecylbenzene sulfonic acid were studied using complex impedance spectroscopy, current density measurements as a function of voltage (J-V) and capacitance-voltage (C-V) measurements. The J-V characteristics of these junctions are asymmetrical and nonlinear, and there is no tendency to saturate for the reverse current. In both forward bias and reverse bias, these junctions exhibit a significant, fast and reversible response to methane gas, which was explained by changes in the Schottky barrier height and in the carrier concentration of the polypyrrole sample due to methane exposure. The junction parameters, such as the ideality and rectification factors, are strongly influenced by the gas. From the C-V characteristics, the built-in voltage and the charge concentration are found to be also influenced by the gas. Complex impedance spectroscopy showed a single semicircular arc, which can be represented by a very simple equivalent circuit that is characteristic of a metal-semiconductor contact. The parameters extracted from these measurements are in agreement with the proposed mechanism.
Keywords
Schottky barriers; capacitance; carrier density; conducting polymers; current density; gas sensors; polymer films; semiconductor-metal boundaries; Al; Al/polymer/Au sandwich structure; Au; C-V characteristics; J-V characteristics; Schottky barrier height; built-in voltage; capacitance-voltage measurements; carrier concentration; charge concentration; complex impedance spectroscopy; conducting polymer; current density measurements; dodecylbenzene sulphonic acid dopant; doped polypyrrole thin films; electrical sensing properties; forward bias; ideality factor; junction parameters; metal-semiconductor contact; methane gas response; rectification factor; reverse bias; Capacitance measurement; Capacitance-voltage characteristics; Current density; Current measurement; Density measurement; Electrochemical impedance spectroscopy; Impedance measurement; Schottky barriers; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037289
Filename
1037289
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