• DocumentCode
    2314307
  • Title

    Electrical sensing properties of polypyrrole

  • Author

    Campos, M.

  • Author_Institution
    UNIP - Univ. Paulista, Ribeirao Preto, Brazil
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    1219
  • Abstract
    Thin films of polypyrrole doped with dodecylbenzene sulfonic acid were studied using complex impedance spectroscopy, current density measurements as a function of voltage (J-V) and capacitance-voltage (C-V) measurements. The J-V characteristics of these junctions are asymmetrical and nonlinear, and there is no tendency to saturate for the reverse current. In both forward bias and reverse bias, these junctions exhibit a significant, fast and reversible response to methane gas, which was explained by changes in the Schottky barrier height and in the carrier concentration of the polypyrrole sample due to methane exposure. The junction parameters, such as the ideality and rectification factors, are strongly influenced by the gas. From the C-V characteristics, the built-in voltage and the charge concentration are found to be also influenced by the gas. Complex impedance spectroscopy showed a single semicircular arc, which can be represented by a very simple equivalent circuit that is characteristic of a metal-semiconductor contact. The parameters extracted from these measurements are in agreement with the proposed mechanism.
  • Keywords
    Schottky barriers; capacitance; carrier density; conducting polymers; current density; gas sensors; polymer films; semiconductor-metal boundaries; Al; Al/polymer/Au sandwich structure; Au; C-V characteristics; J-V characteristics; Schottky barrier height; built-in voltage; capacitance-voltage measurements; carrier concentration; charge concentration; complex impedance spectroscopy; conducting polymer; current density measurements; dodecylbenzene sulphonic acid dopant; doped polypyrrole thin films; electrical sensing properties; forward bias; ideality factor; junction parameters; metal-semiconductor contact; methane gas response; rectification factor; reverse bias; Capacitance measurement; Capacitance-voltage characteristics; Current density; Current measurement; Density measurement; Electrochemical impedance spectroscopy; Impedance measurement; Schottky barriers; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2002. Proceedings of IEEE
  • Print_ISBN
    0-7803-7454-1
  • Type

    conf

  • DOI
    10.1109/ICSENS.2002.1037289
  • Filename
    1037289