An accurate and computationally-efficient model of boron implantation through screen oxide layers into (100) single-crystal silicon

In this paper is presented the development of the first computationally-efficient and accurate model for boron implants into single-crystal silicon through screen oxide layers with explicit dependence on implant energy, dose, tilt angle, rotation angle and oxide thickness. As the basis of this model, a very detailed study has been performed on the effects of screen oxides on tilt and rotation angle, dose, and energy dependency of boron profiles. This model has been implemented into SUPREM 3 in order to demonstrate its capabilities, a number of which are illustrated in this paper.<>