An accurate and computationally-efficient model of boron implantation through screen oxide layers into (100) single-crystal silicon

Author

Lim, D.H. ; Shyh-Horng Yang ; Morris, S.J. ; Tasch, A.F.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

291

Lastpage

294

Abstract

In this paper is presented the development of the first computationally-efficient and accurate model for boron implants into single-crystal silicon through screen oxide layers with explicit dependence on implant energy, dose, tilt angle, rotation angle and oxide thickness. As the basis of this model, a very detailed study has been performed on the effects of screen oxides on tilt and rotation angle, dose, and energy dependency of boron profiles. This model has been implemented into SUPREM 3 in order to demonstrate its capabilities, a number of which are illustrated in this paper.<>

Keywords

boron; doping profiles; electronic engineering computing; elemental semiconductors; integrated circuit technology; ion implantation; semiconductor doping; semiconductor process modelling; silicon; simulation; (100) single-crystal Si; B implantation; SUPREM 3; Si:B; computationally-efficient model; dose; implant energy; oxide thickness; process simulation; rotation angle; screen oxide layers; tilt angle; Application specific integrated circuits; Boron; Computational modeling; Ion implantation; MOSFET circuits; Microelectronic implants; Monte Carlo methods; Semiconductor device modeling; Shadow mapping; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347350

Filename

347350