Title :
Imaging periodic scarred states in InAs open quantum dots: Evidence of quantum darwinism
Author :
Burke, A.M. ; Akis, R. ; Day, T.E. ; Speyer, G. ; Bennett, B.R. ; Ferry, D.K.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
Scanning gate microscopy (SGM) is used to image scar structures in an InAs open quantum dot, which is defined via electron beam lithography and wet etching. Periodicities in magnetic field are found within the scanned images and correlate to those observed in the conductance fluctuations. Simulations have shown that these magnetic transform images show striking resemblance to actual scars found in the dot that replicate through the conductance modes in direct agreement with the theory of quantum Darwinism.
Keywords :
III-V semiconductors; electric admittance; electron beam lithography; etching; indium compounds; quantum theory; semiconductor quantum dots; surface structure; InAs; InAs open quantum dots; SGM; conductance fluctuations; conductance modes; electron beam lithography; magnetic field; magnetic transform images; periodic scarred states; periodicities; quantum Darwinism theory; scanned images; scanning gate microscopy; scar structures; wet etching; Birds; Lead; Magnetic confinement; Magnetic resonance imaging; Magnetic tunneling; Probes; Transforms;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699681
