Interconnection formation by simultaneous copper doping in chemical-vapor-deposited aluminum (Al-Cu CVD)

Author

Kondoh, E. ; Kawano, Yoshihiro ; Takeyasu, N. ; Katagiri, Takahiro ; Yamamoto, H. ; Ohta, T.

Author_Institution

LSI Res. Center, Kawasaki Steel Corp., Chiba, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

277

Lastpage

280

Abstract

A novel chemical vapor deposition (CVD) method to form Al-Cu wirings and via filling by simultaneous doping of Cu (Al-Cu CVD) has been developed and demonstrated for advanced ULSI applications. The success of Al-Cu CVD was accomplished by finding appropriate Al and Cu metalorganic precursors: dimethylaluminum-hydride and cyclopentadienylcopper-triethylphosphine. The deposited Al-Cu film had an excellent uniformity of Cu distribution and contained CuAl/sub 2/ phase that is indicative of hypo-eutectic Al-Cu alloy applicable to a practical interconnection use. It was shown that the electric resistance and electromigration endurance of CVD Al was improved by Cu incorporation using this simultaneous Cu doping method.<>

Keywords

CVD coatings; VLSI; aluminium alloys; chemical vapour deposition; copper alloys; electromigration; integrated circuit technology; metallisation; Al-Cu CVD; Al-Cu via filling; Al-Cu wirings; AlCu; IC metallisation; ULSI applications; chemical-vapor-deposited Al; cyclopentadienylcopper-triethylphosphine; dimethylaluminum-hydride; electric resistance; electromigration endurance; hypo-eutectic Al-Cu alloy; interconnection formation; metalorganic precursors; simultaneous Cu doping method; Aluminum alloys; Annealing; Chemical vapor deposition; Copper alloys; Doping; Electromigration; Filling; Hydrogen; Inductors; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347352

Filename

347352