Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique

Author

Yamada, H. ; Hoshi, T. ; Takewaki, T. ; Shibata, T. ; Ohmi, T. ; Nitta, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

269

Lastpage

272

Abstract

By using a simple pulsed-current stressing technique, we have demonstrated that both electromigration and stressmigration resistance of giant-grain Cu interconnects can be evaluated separately in a very efficient manner. From the results of such lifetests, it was found that the reliability of the the Cu interconnect is primarily determined by the stressmigration rather than by the electromigration.<>

Keywords

circuit reliability; copper; electromigration; impulse testing; integrated circuit testing; life testing; metallisation; monolithic integrated circuits; Cu; ULSI; copper interconnects; electromigration; giant-grain Cu interconnects; lifetests; pulsed-current stressing technique; reliability; stressmigration; Copper; Degradation; Electromigration; Heating; Space vector pulse width modulation; Temperature; Testing; Thermal resistance; Thermal stresses; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347354

Filename

347354

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2314418