Title :
Reliability of CVD Cu buried interconnections
Author :
Cho, J.S.H. ; Ho-Kyu Kang ; Changsup Ryu ; Wong, S.S.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
CVD Cu, which is both highly conductive and reliable, has been investigated as an interconnection material. Cu/sup 1+/ (hfac)(tmvs) is the precursor used in this work. Excellent conformality, which is required for reliable high aspect ratio buried interconnection, has been observed and quantified by simulations. Cu diffusion through TiW as thin as 25 nm has been investigated using large area diodes. Drift of Cu through various dielectrics has been observed, demonstrating the necessity of diffusion barriers. Electromigration studies indicate that Cu interconnections are more reliable than Al alloys.<>
Keywords :
VLSI; chemical vapour deposition; circuit reliability; copper; electromigration; integrated circuit technology; metallisation; CVD; Cu; Cu buried interconnections; aspect ratio; conformality; diffusion barriers; electromigration studies; interconnection material; large area diodes; Capacitors; Conducting materials; Copper alloys; Dielectric materials; Diodes; Dry etching; Electromigration; Materials reliability; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347355
