DocumentCode
2314447
Title
High performance dielectrics and processes for ULSI interconnection technologies
Author
Paraszczak, J. ; Edelstein, D. ; Cohen, S. ; Babich, E. ; Hummel, J.
Author_Institution
Semicond. & Res. Dev. Center, IBM Corp., East Fishkill, NY, USA
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
261
Lastpage
264
Abstract
One method of improving the performance of silicon integrated circuits is to reduce the delay of the interconnections between individual devices by reducing the resistance and capacitance of the connection. Even though it is possible to replace the commonly used aluminium conductors in current interconnection technologies with copper, no company has done so in production, due to a series of unanswered questions pertaining to the cost and leverage of doing so. This paper will attempt to elucidate the performance and cost benefits of this approach and will try to identify and resolve some of the important integration issues related to the inclusion of polymers and copper conductors into ULSI interconnections.<>
Keywords
VLSI; dielectric thin films; integrated circuit technology; metallisation; monolithic integrated circuits; ULSI interconnection technologies; copper conductors; cost benefits; delay; integration issues; polymers; silicon integrated circuits; Aluminum; Capacitance; Conductors; Copper; Delay; Dielectrics; Integrated circuit interconnections; Integrated circuit technology; Silicon; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347356
Filename
347356
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