• DocumentCode
    2314447
  • Title

    High performance dielectrics and processes for ULSI interconnection technologies

  • Author

    Paraszczak, J. ; Edelstein, D. ; Cohen, S. ; Babich, E. ; Hummel, J.

  • Author_Institution
    Semicond. & Res. Dev. Center, IBM Corp., East Fishkill, NY, USA
  • fYear
    1993
  • fDate
    5-8 Dec. 1993
  • Firstpage
    261
  • Lastpage
    264
  • Abstract
    One method of improving the performance of silicon integrated circuits is to reduce the delay of the interconnections between individual devices by reducing the resistance and capacitance of the connection. Even though it is possible to replace the commonly used aluminium conductors in current interconnection technologies with copper, no company has done so in production, due to a series of unanswered questions pertaining to the cost and leverage of doing so. This paper will attempt to elucidate the performance and cost benefits of this approach and will try to identify and resolve some of the important integration issues related to the inclusion of polymers and copper conductors into ULSI interconnections.<>
  • Keywords
    VLSI; dielectric thin films; integrated circuit technology; metallisation; monolithic integrated circuits; ULSI interconnection technologies; copper conductors; cost benefits; delay; integration issues; polymers; silicon integrated circuits; Aluminum; Capacitance; Conductors; Copper; Delay; Dielectrics; Integrated circuit interconnections; Integrated circuit technology; Silicon; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-1450-6
  • Type

    conf

  • DOI
    10.1109/IEDM.1993.347356
  • Filename
    347356