DocumentCode
2314451
Title
Fabrication and characterization of an undoped GaAs single hole transistor
Author
Klochan, O. ; Chen, J.C.H. ; Micolich, A.P. ; Hamilton, A.R. ; Muraki, K. ; Hirayama, Y.
Author_Institution
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
113
Lastpage
114
Abstract
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.
Keywords
Coulomb blockade; III-V semiconductors; aluminium compounds; gallium compounds; noise; semiconductor heterojunctions; single electron transistors; AlGaAs-GaAs; Coulomb blockade oscillations; improved noise performance; little drift; stable electrical characteristics; undoped AlGaAs-GaAs heterostructure; undoped GaAs single hole transistor; Gallium arsenide;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699687
Filename
5699687
Link To Document