Title :
A monolithic 23.5 to 94 GHz frequency quadrupler using 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs HEMT technology
Author :
Wang, H. ; Chang, K.W. ; Lo, D.C.W. ; Tan, K.L. ; Streit, D. ; Dow, G.S. ; Allen, B.R.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; frequency multipliers; gallium arsenide; indium compounds; variable-frequency oscillators; 0.1 micron; 23.5 to 94 GHz; 5 to 7 dB; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs; MMICs; VCOs; W-band; buffer amplifier; conversion loss; frequency quadrupler; frequency sources; pseudomorphic HEMT technology; Frequency conversion; Frequency measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Oscillators; Phase noise; Space technology;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347357
