Polysilicon resistor trimming for packaged integrated circuits

Author

Babcock, J.A. ; Feldbaumer, D.W. ; Mercier, V.M.

Author_Institution

Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

247

Lastpage

250

Abstract

Pulse current trimming to adjust values of polysilicon resistors has been investigated for use in full scale IC production. The technique is remarkably accurate, layout efficient, quick and inexpensive from a test perspective, and requires no additional process complexity. The trim process is shown to be reversible to a small, but usable extent for n-type polysilicon. A new physical model consistent with all observations for resistance trim and recovery is presented. Finally, reliability results from extensive burn-in show the trimmed resistors to be exceptionally robust.<>

Keywords

circuit reliability; elemental semiconductors; integrated circuit technology; monolithic integrated circuits; resistors; silicon; IC processing; Si; burn-in; full scale IC production; monolithic ICs; n-type polysilicon; packaging; physical model; polysilicon resistor trimming; pulse current trimming; reliability results; Annealing; Current density; Implants; Integrated circuit packaging; Pulse measurements; Resistors; Semiconductor device packaging; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347359

Filename

347359