DocumentCode
2314502
Title
Characterization and modeling of Ge film thermometers for low temperature measurements
Author
Dugaev, V.K. ; McKenney, C. ; Nemish, I.Yu. ; Kholevchuk, V.V. ; Soloviev, E.A. ; Ihas, G.G. ; Mitin, V.F. ; Vieira, M.
Author_Institution
Inst. of Mater. Sci. Problems, Chernovtsy, Ukraine
Volume
2
fYear
2002
fDate
2002
Firstpage
1275
Abstract
Cryogenic resistance thermometers composed of Ge films on GaAs substrates have been produced and characterized They are able to measure temperature over a wide range, from 0.03 K to 400 K. Behavior of these thermometers in magnetic fields and under gamma irradiation has been studied. The low-temperature conduction and magnetoresistance mechanisms of Ge-films used as a sensitive material for thermometers have been analyzed.
Keywords
elemental semiconductors; gamma-ray effects; germanium; low-temperature techniques; resistance thermometers; semiconductor thin films; 0.03 to 400 K; Ge-GaAs; cryogenic resistance thermometers; gamma irradiation; low temperature measurements; low-temperature conduction; magnetic fields; magnetoresistance mechanisms; Cryogenics; Electrical resistance measurement; Gallium arsenide; Magnetic field measurement; Magnetic films; Magnetic materials; Substrates; Temperature distribution; Temperature measurement; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037300
Filename
1037300
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