Enhanced performance of multi-GHz PLL LSIs using sub-1/4-micron gate ultrathin film CMOS/SIMOX technology with synchrotron X-ray lithography

Author

Kado, Y. ; Ohno, T. ; Harada, M. ; Deguchi, K. ; Tsuchiya, T.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

243

Lastpage

246

Abstract

A phase-locked loop (PLL) LSI containing a multi-GHz prescaler has been fabricated using 0.24-/spl mu/m-gate ultrathin-film CMOS/SIMOX technology combined on a trial basis with synchrotron radiation X-ray (SR) lithography. While operating at up to 2.2 GHz and consuming only 4.5 mW at 1.5 V, it is capable of 4-GHz performance with power consumption of 19 mW at 2.5 V. Even at a low supply voltage of 1.5 V, high input-sensitivity was also achieved in the 1- to 2-GHz frequency range. These results suggest that sub-quarter-micron CMOS/SIMOX device structures could find a place in extremely low-power LSIs containing ultra-high-speed circuits.<>

Keywords

CMOS integrated circuits; SIMOX; VLSI; X-ray lithography; integrated circuit technology; linear integrated circuits; phase-locked loops; 0.24 micron; 1.5 to 2.5 V; 2.2 to 4 GHz; 4.5 to 19 mW; PLL LSIs; high input-sensitivity; low supply voltage; low-power LSIs; multi-GHz prescaler; phase-locked loop; power consumption; synchrotron X-ray lithography; ultra-high-speed circuits; ultrathin film CMOS/SIMOX technology; CMOS technology; Circuits; Energy consumption; Frequency; Large scale integration; Lithography; Low voltage; Phase locked loops; Strontium; Synchrotron radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347360

Filename

347360